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Sensitivity of dislocation engineered Si p-n junctions to influence of illumination and ultrasound

A.Sh. DavletovaPhysical-Technical Institute, 2B Mavlyanov St., 700084, Tashkent, UzbekistanSmagul KarazhanovInstitute for Energy Technology, PO Box 40, NO-2027, Kjeller, Norway

Inorganic Materialsjournal2009en

ABI

Annotatsiya

In this work it is shown that the dislocation engineered Si p-n junctions are sensitive to variations of illumination intensity. It is found that with the aim of ultrasound processing it is possible to purposefully modulate properties of the device structure.

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Mavzular

Semiconductor materials and interfaces Silicon and Solar Cell Technologies Silicon Nanostructures and Photoluminescence

Identifikatorlar

DOI: 10.1134/s002016850911003x

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