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A.Sh. Davletova

5 ta ish

Ulugbek State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, Uzbekistan

  1. An ionization-type Si:S-based semiconductor converter of infrared images with sensitivity in the spectral range of CO2-laser radiation

    V. T. Tulanov, Kh. B. Siyabekov, A.Sh. Davletova +1

    MaqolaLaser Design and ApplicationsSemiconductors20011 iqtibos
    ABI

  2. Dependence of spectral and volt-amper characteristics forms of IR-radiating diodes from the way, material and doping level of the working layers, produced by liquid-phase method

    A. Kutlimratov, A.Sh. Davletova, S. Khakimova

    MaqolaOptical and Acousto-Optic Technologies20040 iqtibos
    ABI

  3. Peculiarities of spectral characteristics of IR-light emitting diodes obtained by the liquid phase epitaxy

    A. Kutlimratov, A.Sh. Davletova

    MaqolaSemiconductor Lasers and Optical Devices20060 iqtibos
    ABI

  4. Light emitting diodes structures obtained by overlapping the liquid phase epitaxy and gas phase diffusion of Zn

    A. Kutlimratov, A.Sh. Davletova

    MaqolaAdvanced Semiconductor Detectors and Materials20060 iqtibos
    ABI

  5. Sensitivity of dislocation engineered Si p-n junctions to influence of illumination and ultrasound

    A.Sh. Davletova, Smagul Karazhanov

    MaqolaSemiconductor materials and interfacesInorganic Materials20090 iqtibos
    ABI