Maqola

Investigation of the electrophysical properties and structures of impurity-defective complexes in silicon doped with palladium

Sh. MakhkamovNuclear Physics Institute of the Uzbekistan Academy of Sciences, Tashkent, UzbekistanN.A. TursunovNuclear Physics Institute of the Uzbekistan Academy of Sciences, Tashkent, UzbekistanM. KаrimovNuclear Physics Institute of the Uzbekistan Academy of Sciences, Tashkent, UzbekistanС. З. ЗайнабидиновZ. M. Babur Andizhan State University, Andizhan, UzbekistanА. R. SattievNuclear Physics Institute of the Uzbekistan Academy of Sciences, Tashkent, UzbekistanM. N. ErdonovNuclear Physics Institute of the Uzbekistan Academy of Sciences, Tashkent, UzbekistanKh. M. KholmedovNuclear Physics Institute of the Uzbekistan Academy of Sciences, Tashkent, Uzbekistan

Russian Physics Journaljournal2010en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Mavzular

Silicon Nanostructures and Photoluminescence Silicon and Solar Cell Technologies Semiconductor materials and interfaces

Identifikatorlar

DOI: 10.1007/s11182-010-9448-4

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