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Effect of the composition on physical properties of CdTe absorber layer fabricated by chemical molecular beam deposition for use in thin film solar cells

T.M. RazykovDepartment of Electrical Engineering, University of South Florida 3 , 4202 E. Fowler Ave., ENB 0118 Tampa, Florida 33620-5350, USANowshad AminM.A. AlghoulB. A. ErgashevPhysical-Technical Institute, Scientific Association “Physics-Sun” Bodomzor Yoli 2B 1 , Tashkent 700084, UzbekistanChris FerekidesDepartment of Electrical Engineering, University of South Florida 3 , 4202 E. Fowler Ave., ENB 0118 Tampa, Florida 33620-5350, USAY. GoswamiDepartment of Electrical Engineering, University of South Florida 3 , 4202 E. Fowler Ave., ENB 0118 Tampa, Florida 33620-5350, USAM. K. HakkulovPhysical-Technical Institute, Scientific Association “Physics-Sun” Bodomzor Yoli 2B 1 , Tashkent 700084, UzbekistanK.M. KouchkarovPhysical-Technical Institute, Scientific Association “Physics-Sun” Bodomzor Yoli 2B 1 , Tashkent 700084, UzbekistanKamaruzzaman SopianM.Y. SulaimanH. S. UllalNational Center for Photovoltaics, National Renewable Energy Laboratory 4 , Golden, Colorado 80401, USA

Journal of Applied Physicsjournal2012en

ABI

Annotatsiya

We developed revolutionary novel and low cost and nonvacuum chemical molecular beam deposition method for fabrication of thin film II-VI solar cells in the atmospheric pressure gas (He, Ar, H2) flow. High quality polycrystalline CdTe films with different compositions (stoichiometric and Cd/Te ≤1.0 and Cd/Te ≥ 1.0) and thickness of 2–3 μm were fabricated on ceramic (SiO2:Al2O3) substrates at temperature of 600 °C. Separate sources of Cd and Te with respective purities of 99.999% were used as precursors. The growth rate was varied in the range of 9–30 Å/s. The effect of the composition and CdCl2 treatment on the structure, intrinsic point defects, and electrical properties of CdTe films was investigated by XRD, AFM, Raman spectra, photoluminescence, and Hall methods.

Mavzular

Chalcogenide Semiconductor Thin Films Quantum Dots Synthesis And Properties Advanced Semiconductor Detectors and Materials

Identifikatorlar

DOI: 10.1063/1.4739277

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