Development and optimization of the production technology of large-size position-sensitive detectors
Р. А. МуминовPhysical Technical Institute, Physics-Sun Scientific and Production Association, Academy of Sciences of the Republic of Uzbekistan, ul. Bodomzor yuli 2B, Tashkent, 10008, UzbekistanS. A. RadzhapovPhysical Technical Institute, Physics-Sun Scientific and Production Association, Academy of Sciences of the Republic of Uzbekistan, ul. Bodomzor yuli 2B, Tashkent, 10008, UzbekistanYo. K. ToshmuradovPhysical Technical Institute, Physics-Sun Scientific and Production Association, Academy of Sciences of the Republic of Uzbekistan, ul. Bodomzor yuli 2B, Tashkent, 10008, UzbekistanSh. RisalievaPhysical Technical Institute, Physics-Sun Scientific and Production Association, Academy of Sciences of the Republic of Uzbekistan, ul. Bodomzor yuli 2B, Tashkent, 10008, UzbekistanS. BekbaevH.A. Yasaui International Kazakh-Turkish University, Turkestan, KazakhstanA. N. KurmantaevH.A. Yasaui International Kazakh-Turkish University, Turkestan, Kazakhstan
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Results of development and optimization of the production technology of large-size semiconductor position-sensitive X-ray detectors, based on Si(Li)-p-i-n structures and intended for tomographic and environmental problems, are described. The detectors with a 50 × 50 × 2-mm-size sensitive area with 8, 16, and 32 strips were produced. With a voltage of 100–500 V, the energy resolution is 50 and 75–80 keV for electrons with an energy of 1 MeV and for α particles with an energy of 7.65 MeV, respectively, when the dark current is 0.5–1 μA, the capacitance value is 300 pF, and noise is 40 keV.
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