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Decay rate constants of sputtered vanadium oxide clusters

С. Е. МаксимовInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, 100125, UzbekistanН. Х. ДжемилевInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, 100125, UzbekistanС. Ф. КоваленкоInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, 100125, UzbekistanО. Ф. ТукфатуллинInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, 100125, UzbekistanШ. Т. ХожиевInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, 100125, Uzbekistan
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Results from studying the emission and fragmentation of V n O ± clusters sputtered from a vanadium surface by Xe+ ions at O2 pressures of P = 4–5 × 10−3 Pa are presented. The average decay rate constants of V n O ± clusters for major fragmentation channels are determined. It is shown that the decay rate constants for clusters of similar stoichiometry do not depend on their charge states.

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