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SIMS of silicon bombarded with Sb+ m cluster ions

С. Н. МорозовInstitute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent, 100125, UzbekistanУ. Х. РасулевInstitute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent, 100125, Uzbekistan

Bulletin of the Russian Academy of Sciences Physicsjournal2014en

ABI

Annotatsiya

The emission of Si + (n = 1–11) cluster ions and Si n X + (X stands for B or Sb) polyatomic ions when bombarding a single silicon crystal with Sb + (m = 1–4) cluster ions with energies E 0 = 3–12 keV is studied. Considerable nonadditive enhancement of the yield of Si + cluster ions and most polyatomic ions is observed when the number of atoms in the bombarding cluster ions is increased. The sensitivity enhancement factor for detecting boron impurities is as high as 50 when the cluster-SIMS-molecule technique is applied.

Mavzular

Ion-surface interactions and analysis Integrated Circuits and Semiconductor Failure Analysis Diamond and Carbon-based Materials Research

Identifikatorlar

DOI: 10.3103/s1062873814060203

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