Maqola

On the unimolecular decay and mechanism of formation of Si+ n cluster ions

Н. Х. ДжемилевInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, UzbekistanС. Ф. КоваленкоInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, UzbekistanС. Е. МаксимовInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, UzbekistanО. Ф. ТукфатуллинInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, UzbekistanШ. Т. ХожиевInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, Uzbekistan

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniquesjournal2015en

ABI

Annotatsiya

Dependences of the emission and fragmentation of sputtered Si + clusters with n =1–11 on the oxygen pressure near the surface are studied using secondary-ion mass spectrometry under Xe+-ion bombardment of a silicon surface. It is shown that taking into account the mutual reversibility of reactions of formation and unimolecular decay, the formation of Si + clusters under ion sputtering can be described within the framework of a mechanism of combinatorial synthesis.

Mavzular

Ion-surface interactions and analysis Integrated Circuits and Semiconductor Failure Analysis Diamond and Carbon-based Materials Research

Identifikatorlar

DOI: 10.1134/s1027451015020275

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