Method for additional purification of the surface of Si(111) single crystal

A method for additional purification of the surface of single crystals of semiconductors is developed, which consists in the preliminary cleaning of samples by thermal heating in combination or without ion etching in ultrahigh vacuum, followed by implantation with low-energy Ba+ ions (or ions of other alkaline elements) and their successive removal by brief (1 min) high-temperature (T = 1550 K) thermal heating. The effect of additional purification is achieved by the fact that the embedded ions of Ba+ or other alkaline elements, being active, form compounds with impurity atoms (O, C, S, N, etc.) and are removed during hightemperature heating.

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