Ushbu ishga iqtibos qilgan ishlar

12 ta ish

Ish: Method for additional purification of the surface of Si(111) single crystal

1. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

   Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

   MaqolaSemiconductor materials and interfacesJournal of Nano- and Electronic Physics202213 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.095303

2. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

   Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

   MaqolaSemiconductor materials and interfacesEast European Journal of Physics20238 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.258448

3. Formation of photoelectron spectra of alloys niobium-molybdenum-zirconium

   Y. S. Ergashov, Burkhon Donaev, Sherzod Khudainazarov +1

   MaqolaElectron and X-Ray Spectroscopy TechniquesE3S Web of Conferences20216 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.104968

4. Changes in the electronic structure of the Si surface as a result of ion implantation

   S. B. Donaev, Umida Ziyamukhamedova, M. Kenjaeva +3

   MaqolaIon-surface interactions and analysisE3S Web of Conferences20234 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.144489

5. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

   S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

   MaqolaIon-surface interactions and analysisAIP conference proceedings20224 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.232444

6. Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

   Gunel Imanova, I. R. Bekpulatov

   MaqolaSemiconductor materials and interfacesAmerican Journal of Nano Research and Applications20211 iqtibos

   ABIABI:AkademIndex/openalex/2021.article.002486

7. Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

   Y. S. Ergashov, S. B. Donaev

   MaqolaIon-surface interactions and analysisJournal of Nano- and Electronic Physics20221 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.095304

8. Influence of Various Impacts on the Composition and Structure of the Surface of Single-Crystal Si

   Б. Е. Умирзаков, I. R. Bekpulatov, Z. A. Tursunmetova

   MaqolaMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20231 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.558588

9. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

   I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

   MaqolaSemiconductor materials and interfacesE3S Web of Conferences20211 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.571863

10. Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

    Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2

    MaqolaSilicon Nanostructures and PhotoluminescenceSemiconductors20220 iqtibos

    ABIABI:AkademIndex/openalex/2022.article.002267

11. Composition and electronic structure of hidden nanoscale phases and layers of BaSi-=SUB=-2-=/SUB=- formed in the near-surface of Si

    Б. Е. Умирзаков, M.T. Normuradov, D. A. Normurodov +1

    MaqolaSemiconductor materials and interfacesФизика и техника полупроводников20220 iqtibos

    ABIABI:AkademIndex/openalex/2022.article.010500

12. Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

    S. B. Donaev, Ganjimurod Shirinov, Surayyo Ergasheva +3

    MaqolaSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20230 iqtibos

    ABIABI:AkademIndex/openalex/2023.article.006628