Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses
Б. Е. УмирзаковArifov Institute of Ion-Plasma and Laser Technologies, 100125, Tashkent, UzbekistanS. B. DonaevTashkent State Technical University named after I. Karimova, 100095, Tashkent, UzbekistanR. M. YorkulovTashkent State Technical University named after I. Karimova, 100095, Tashkent, UzbekistanР. Х. АшуровArifov Institute of Ion-Plasma and Laser Technologies, 100125, Tashkent, UzbekistanВ. М. РотштейнArifov Institute of Ion-Plasma and Laser Technologies, 100125, Tashkent, Uzbekistan
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The composition, morphology, and electronic structure of a SiO2 nanofilm of different thicknesses created by thermal oxidation on the Si(111) surface are studied in this work. It is shown that up to a thickness of 30–40 Å the film has an island character. At d ≥ 60 Å, a homogeneous continuous film of SiO2 with stoichiometric surface roughness, which does not exceed 1.5–2 nm, is formed. Regardless of the thickness of the SiO2 films, the noticeable interdiffusion of atoms at the SiO2–Si interface is not observed. The regularities of changes in the composition, the degree of surface coverage, and the energy of plasma oscillations with a change in the thickness of SiO2/Si(111) films are determined in the range from 20 to 120 Å.
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