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27 ta ish

Ish: Vertical Al<sub>2</sub>Se<sub>3</sub>/MoSe<sub>2</sub> heterojunction on sapphire synthesized using ion beam

  1. Electric Field Effect in Atomically Thin Carbon Films

    Kostya S. Novoselov, A. K. Geǐm, С. В. Морозов +5

    Maqola200466 iqtibos
    ABI

  2. Single-layer MoS2 transistors

    Branimir Radisavljevic, Aleksandra Rađenović, Jacopo Brivio +2

    Maqola20118 iqtibos
    ABI

  3. Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide

    Britton W. H. Baugher, Hugh Churchill, Yafang Yang +1

    Maqola20144 iqtibos
    ABI

  4. Epitaxial growth of a monolayer WSe <sub>2</sub> -MoS <sub>2</sub> lateral p-n junction with an atomically sharp interface

    Mingyang Li, Yumeng Shi, Chia-Chin Cheng +10

    Maqola20153 iqtibos
    ABI

  5. Vertical and in-plane heterostructures from WS2/MoS2 monolayers

    Yongji Gong, Junhao Lin, Xingli Wang +15

    Maqola20143 iqtibos
    ABI

  6. Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions

    Xidong Duan, Chen Wang, Jonathan C. Shaw +11

    Maqola20143 iqtibos
    ABI

  7. Synthesis of Large‐Area MoS<sub>2</sub> Atomic Layers with Chemical Vapor Deposition

    Yi‐Hsien Lee, Xinquan Zhang, Wenjing Zhang +8

    Maqola20122 iqtibos
    ABI

  8. Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2

    Philipp Tonndorf, Robert Schmidt, Philipp Böttger +9

    Maqola20132 iqtibos
    ABI

  9. Lateral MoS<sub>2</sub> p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics

    Min Sup Choi, Deshun Qu, Daeyeong Lee +4

    Maqola20142 iqtibos
    ABI

  10. Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors

    Chun-Ming Huang, Sanfeng Wu, Ana M. Sánchez +7

    Boshqa20142 iqtibos
    ABI

  11. Doping against the Native Propensity of MoS<sub>2</sub>: Degenerate Hole Doping by Cation Substitution

    Joonki Suh, Tae‐Eon Park, Der-Yuh Lin +11

    Maqola20142 iqtibos
    ABI

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