Photovoltatic Effect in Au–nSi–Au Structures with Schottky Barriers and Features of Spectral Characteristics
A. V. KarimovPhysical–Technical Institute, Physics–Sun NGO, Academy of Sciences of the Republic of Uzbekistan, 100084, Tashkent, UzbekistanD. M. YodgorovaPhysical–Technical Institute, Physics–Sun NGO, Academy of Sciences of the Republic of Uzbekistan, 100084, Tashkent, UzbekistanF. A. GiyasovaPhysical–Technical Institute, Physics–Sun NGO, Academy of Sciences of the Republic of Uzbekistan, 100084, Tashkent, UzbekistanE. M. ShpilevskiyLuikov Heat and Mass Transfer Institute, National Academy of Science of Belarus, 220072, Minsk, BelarusN. I. UsmanovaPhysical–Technical Institute, Physics–Sun NGO, Academy of Sciences of the Republic of Uzbekistan, 100084, Tashkent, Uzbekistan
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The results of a study of a photovoltaic silicon structure with two Schottky barriers are presented. It is revealed that Au–nSi–Au structures in a temperature range of room temperature to 40°C at low operating voltages of 0.1–0.2 V are characterized by a weak temperature dependence of the photocurrent. As a result, there is a gradual increase in the light current, which ensures high photosensitivity values under low light.
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