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Growth and Characterization of (ZnSe)0.1(SnSe)0.9 Films for Use in Thin Film Solar Cells

T. M. RazykovAcademy of Sciences Republic of Uzbekistan, Tashkent, UzbekistanA. BosioUniversity of Parma, Parma, ItalyB. A. ErgashevAcademy of Sciences Republic of Uzbekistan, Tashkent, UzbekistanK.M. KouchkarovAcademy of Sciences Republic of Uzbekistan, Tashkent, UzbekistanAbdurashid MavlonovAcademy of Sciences Republic of Uzbekistan, Tashkent, UzbekistanAlessandro RomeoUniversity of Verona, Verona, ItalyElisa ArtegianiUniversity of Verona, Verona, ItalyN. RomeoUniversity of Parma, Parma, ItalyR. T. Yuldoshov

EU PVSECrepository2018en

ABI

Annotatsiya

(ZnSe)x(SnSe)1-x films were fabricated from ZnSe and SnSe precursors using chemical-molecular beam deposition (CMBD) method at a substrate temperature of 500°C. The structural and morphological properties of (ZnSe)0.1(SnSe)0.9 films have been studied. The data from the scanning electron microscope showed that the grain sizes of the films were 5-6 μm and the films had a close-packed polycrystalline structure. The results of X-ray diffraction analysis of the samples revealed that the films have an orthorhombic structure. Structural parameters of the obtained films are given.

Mavzular

Chalcogenide Semiconductor Thin Films Quantum Dots Synthesis And Properties Semiconductor materials and interfaces

Identifikatorlar

DOI: 10.4229/35theupvsec20182018-1cv.4.43

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