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Tensostimulated Effect in a Doped and Heat-Treated Silicon at an Oriented Deformation

О. О. МаматкаримовNamangan Institute of Engineering and Technology, 160115, Namangan, UzbekistanО. ХимматкуловTashkent State Technical University named after Islam Karimov, 100174, Tashkent, UzbekistanI. G. TursunovChirchik State Pedagogical Institute, 100700, Chirchik, Uzbekistan

Physics of the Solid Statejournal2021en

ABI

Annotatsiya

The tensostimulated effect in a heat-treated and doped silicon has been studied. The uniaxial compressing along direction [111] is shown to lead to the decomposition of thermodonors and the appearance of hysteresis in the dependence of the resistivity on the compression value. The tensostimulated effect in a manganese-compensated silicon samples is found to be due to simultaneous changes in the concentration and the mobility of current carriers.

Mavzular

Advanced Materials and Semiconductor Technologies Semiconductor materials and interfaces Silicon and Solar Cell Technologies

Identifikatorlar

DOI: 10.1134/s1063783421050127

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