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I. G. Tursunov

13 ta ish

National University of Uzbekistan

  1. Influence of Deep-Level Impurities on the Strain Electric Properties of Monocrystalline Silicon

    С. З. Зайнабидинов, О. О. Маматкаримов, О. Химматкулов +1

    MaqolaSilicon Nanostructures and PhotoluminescenceUkrainian Journal of Physics20174 iqtibos
    ABI

  2. Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au

    С. З. Зайнабидинов, I. G. Tursunov, О. Химматкулов

    MaqolaSemiconductor materials and interfacesSemiconductors20182 iqtibos
    ABI

  3. Effect of Uniaxial Elastic Deformation on the Current–Voltage Characteristic of Surface-Barrier Sb–p-Si〈Mn〉–Au Diodes

    О. О. Маматкаримов, О. Химматкулов, I. G. Tursunov

    MaqolaSemiconductor materials and interfacesSemiconductors20202 iqtibos
    ABI

  4. Dynamic Strain Conductivity of Compensated Silicon

    С. З. Зайнабидинов, О. О. Маматкаримов, I. G. Tursunov +1

    MaqolaElectromagnetic Effects on MaterialsModern Physics Letters B19981 iqtibos
    ABI

  5. Investigation of the influence of external effects on the behavior of gold impurity in silicon

    С. З. Зайнабидинов, О. О. Маматкаримов, I. G. Tursunov +1

    MaqolaSemiconductor materials and interfacesSemiconductors20001 iqtibos
    ABI

  6. Investigations of the Deep-Level Parameters in Semiconductors

    I. G. Tursunov

    MaqolaElectromagnetic Effects on MaterialsUkrainian Journal of Physics20171 iqtibos
    ABI

  7. Dynamic tensor sensitivity of Si samples

    S.Z. Zajnabidinov, Azizbek Abduraimov, O.O. Mamankarimov +3

    MaqolaForce Microscopy Techniques and Applications19950 iqtibos
    ABI

  8. The influence of the profile of impurity distribution on the parameters of varactors subjected to full hydrostatic compression

    I. G. Tursunov, B.H. Kuchkarov

    MaqolaElectromagnetic Launch and Propulsion TechnologyUzbekiston Fizika Zhurnali20160 iqtibos
    ABI

  9. ABOUT THE SILICON SENSITIVITY OF THE DEEP LEVEL WITH ALTERNATING PRESSURE

    I. G. Tursunov, Abdurahim Okhunov, О. О. Маматкаримов

    MaqolaAdvanced Materials and Semiconductor TechnologiesIIUM Engineering Journal20180 iqtibos
    ABI

  10. Влияние одноосной упругой деформации на вольт-амперную характеристику поверхностно-барьерных диодов Sb-p-Si<Mn>-Au

    О. О. Маматкаримов, О. Химматкулов, I. G. Tursunov

    MaqolaSemiconductor materials and interfacesФизика и техника полупроводников20200 iqtibos
    ABI

  11. Tensostimulated Effect in a Doped and Heat-Treated Silicon at an Oriented Deformation

    О. О. Маматкаримов, О. Химматкулов, I. G. Tursunov

    MaqolaAdvanced Materials and Semiconductor TechnologiesPhysics of the Solid State20210 iqtibos
    ABI

  12. INVESTIGATION OF THE WIDTH OF THE FORBIDDEN ZONEHEAVILY DOPED SEMICONDUCTORS

    I. G. Tursunov, M. A. Rakhmanov

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignThe American Journal of Interdisciplinary Innovations and Research20240 iqtibos
    ABI

  13. EFFECT OF TEMPERATURE ON THE STRAIN SENSITIVITY OF MANGANESE-COMPENSATED SILICON

    I. G. Tursunov, M. A. Rakhmanov

    MaqolaAdvanced MEMS and NEMS TechnologiesAmerican Journal Of Applied Science And Technology20240 iqtibos
    ABI