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Dynamic Strain Conductivity of Compensated Silicon

С. З. ЗайнабидиновPhysics Department, Tashkent State University, Tashkent 700095, UzbekistanО. О. МаматкаримовPhysics Department, Tashkent State University, Tashkent 700095, UzbekistanI. G. TursunovPhysics Department, Tashkent State University, Tashkent 700095, UzbekistanUlugbek TuychievPhysics Department, Tashkent State University, Tashkent 700095, Uzbekistan

Modern Physics Letters Bjournal1998en

ABI

Annotatsiya

In this paper the strain thermal Hall effect has been investigated in initial n-Si(P) and strongly compensated n-Si(Ni) samples of different compensation degree, which have been subject to uniform hydrostatic compression (UHC) under a pulse pressure regime ranging from 0 to 7×10 8 Pa. An experimental investigation of the strain thermal effect in the n-Si(Ni) sample leads to an essential strain conductivity increase, which is largely controlled by density variations of majority carriers.

Mavzular

Electromagnetic Effects on Materials Silicon and Solar Cell Technologies Semiconductor materials and interfaces

Identifikatorlar

DOI: 10.1142/s0217984998000421

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