Влияние одноосной упругой деформации на вольт-амперную характеристику поверхностно-барьерных диодов Sb-p-Si<Mn>-Au
О. О. МаматкаримовНаманганский инженерно-технологический институт, Наманган, УзбекистанО. ХимматкуловI. G. TursunovНаманганский инженерно-технологический институт, Наманган, Узбекистан
ABI
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Abstract The effect of uniaxial elastic deformation on the current–voltage characteristic of surface–barrier Sb– p -Si〈Mn〉–Au diodes is studied. It is shown that reverse-current sensitivity to uniaxial compression exceeds the forward-current sensitivity at identical applied voltages. An increase in the forward current of these structures during deformation is caused by internal gain associated with redistribution of the applied voltage between the base and barrier.
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