EFFECT OF TEMPERATURE ON THE STRAIN SENSITIVITY OF MANGANESE-COMPENSATED SILICON
I. G. TursunovChirchik State Pedagogical University , UzbekistanM. A. RakhmanovChirchik State Pedagogical University , Uzbekistan
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In this paper, the strain gauge response of manganese-doped silicon is studied as a function of manganese concentration, ranging from 1×10¹² cm⁻³ to 1×10¹⁵ cm⁻³, at different temperatures. Mathematical modeling is performed, including calculations and plotting of graphs illustrating how the strain gauge response depends on manganese concentration and temperature.
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