Effect of Uniaxial Elastic Deformation on the Current–Voltage Characteristic of Surface-Barrier Sb–p-Si〈Mn〉–Au Diodes
О. О. МаматкаримовNamangan Institute of Engineering and Technology, Kasansai str. 7, 160115, Namangan, UzbekistanО. ХимматкуловTashkent State Technical University named after Islam Karimov, University str. 2, 100174, Tashkent, UzbekistanI. G. TursunovChirchik State Pedagogical Institute, Amir Temur Str. 104, 100700, Chirchik, Uzbekistan
ABI
Annotatsiya
The effect of uniaxial elastic deformation on the current–voltage characteristic of surface–barrier Sb–p-Si〈Mn〉–Au diodes is studied. It is shown that reverse-current sensitivity to uniaxial compression exceeds the forward-current sensitivity at identical applied voltages. An increase in the forward current of these structures during deformation is caused by internal gain associated with redistribution of the applied voltage between the base and barrier.
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