Radiation Stability of Nickel Doped Solar Cells
К. А. ИсмайловKarakalpak State University, 230112, Nukus, UzbekistanZ. T. KenzhaevKarakalpak State University, 230112, Nukus, UzbekistanS. KoveshnikovTashkent State Technical University, 100095, Tashkent, UzbekistanE. Zh. KosbergenovKarakalpak State University, 230112, Nukus, UzbekistanB. K. IsmaylovTashkent State Technical University, 100095, Tashkent, Uzbekistan
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The effect of doping with nickel on the radiation stability of silicon solar cells has been studied within a γ-radiation dose range of 105–108 rad. It has been shown that the diffusion doping of silicon with impurity nickel atoms increases the radiation stability of the parameters of silicon solar cells. It is implied that a reason of increase in the radiation stability of such solar cells is the existence of clusters, which are composed of impurity nickel atoms and serve as sinks for radiation defects.
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