Maqola

Electric Energy Storage Effect in Hydrated ZrO2-Nanostructured System

Alexander DoroshkevichDonetsk Institute for Physics and Engineering Named after O.O. Galkin, 03028 Kyiv, UkraineAndriy I. LyubchykNanotechcenter LLC, Krzhizhanovsky str. 3, 03680 Kyiv, UkraineБ. Л. ОксенгендлерIon-Plasma and Laser Technologies Institute after U. Arifov, Tashkent 100125, UzbekistanT. Yu. ZelenyakJoint Institute for Nuclear Research, Joliot-Curie 6, Dubna, 141980 Moscow, RussiaNurbol AppazovI. Zhakhaev Kazakh Scientific Research Institute of Rice Growing, Abay Avenue 25B, Kyzylorda 120008, KazakhstanAndriy K. KirillovJoint Institute for Nuclear Research, Joliot-Curie 6, Dubna, 141980 Moscow, RussiaТ.А. VasilenkoSaint-Petersburg Mining University, 199106 St. Petersburg, RussiaAlisa A. TatarinovaJoint Institute for Nuclear Research, Joliot-Curie 6, Dubna, 141980 Moscow, RussiaOksana O. GorbanDonetsk Institute for Physics and Engineering Named after O.O. Galkin, 03028 Kyiv, UkraineВ. И. БоднарчукJoint Institute for Nuclear Research, Joliot-Curie 6, Dubna, 141980 Moscow, RussiaN. N. NikiforovaIon-Plasma and Laser Technologies Institute after U. Arifov, Tashkent 100125, UzbekistanMaria BalasoiuHoria Hulubei National Institute for R&D in Physics and Nuclear Engineering (IFIN-HH), Str. Reactorului no. 30, P.O. Box MG-6, 077125 Magurele, RomaniaDiana MardareFaculty of Physics, “Alexandru Ioan Cuza” University of Iasi, Bld. Carol I, No. 11, 700506 Iasi, RomaniaCarmen MîţăFaculty of Chemistry, “Alexandru Ioan Cuza” University of Iasi, Bld. Carol I, No. 11, 700506 Iasi, RomaniaDorin LucaFaculty of Materials Science and Engineering, “Gheorghe Asachi” Technical University of Iasi (TUIASI), bd. Dimitrie Mangeron, nr. 41, 700050 Iasi, RomaniaM.N. MirzayevInstitute of Radiation Problems, Azerbaijan National Academy of Sciences, Baku AZ1143, AzerbaijanA.A. NabiyevInstitute of Radiation Problems, Azerbaijan National Academy of Sciences, Baku AZ1143, AzerbaijanE. PopovInstitute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, 1784 Sofia, BulgariaAnca StănculescuOptical Processes in Nanostructured Materials Laboratory, National Institute of Materials Physics, 405A Atomistilor Street, P.O. Box MG-7, 077125 Magurele, RomaniaT. E. KonstantinovaDonetsk Institute for Physics and Engineering Named after O.O. Galkin, 03028 Kyiv, UkraineYuliya AleksiayenakJoint Institute for Nuclear Research, Joliot-Curie 6, Dubna, 141980 Moscow, Russia

Nanomaterialsjournal2022en

ABI

Annotatsiya

-nanoparticles system was determined. It was found that the place of localization of different charge carriers is the generalized heterophase boundary-nanoparticles surface. The supposed mechanism of the effect was investigated using the theory of dispersed systems, the band theory, and the theory of contact phenomena in semiconductors, which consists of the formation of localized electronic states in the nanoparticle material due to donor-acceptor interaction with the adsorption ionic atmosphere. The effect is relevant for modern nanoelectronics, microsystem technology, and printed electronics because it allows overcoming the basic physical restrictions on the size, temperature, and operation frequency of the device, caused by leakage currents.

Mavzular

Advanced Energy Technologies and Civil Engineering Innovations Silicon Nanostructures and Photoluminescence Transition Metal Oxide Nanomaterials

Identifikatorlar

DOI: 10.3390/nano12111783

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