DEEP LEVEL TRANSIENT SPECTROSCOPY OF DEFECTS IN SILICON MULTILAYER STRUCTURES DOPED WITH HAFNIUM ATOMS
Shakhrukh Kh. DalievNational University of UzbekistanJavokhir A. ErgashevResearch Institute of semiconductor physics and microelectronics
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Koʻrsatkichlar — AkademScholar · Tez orada