Javokhir A. Ergashev

1 ta ish

Research Institute of semiconductor physics and microelectronics

1. DEEP LEVEL TRANSIENT SPECTROSCOPY OF DEFECTS IN SILICON MULTILAYER STRUCTURES DOPED WITH HAFNIUM ATOMS

   Shakhrukh Kh. Daliev, Javokhir A. Ergashev

   MaqolaSilicon Nanostructures and PhotoluminescenceEuropean Science Review20220 iqtibos

   ABIABI:AkademIndex/openalex/2022.article.007542