Investigation of Some Properties of Nickel Germanosilicides Formed on the Surface of Bulk Si1 – xGex Crystals
Annotatsiya
This article presents the results of a study of some properties of nickel germanosilicides formed on the surface of bulk Si1 – xGex crystals in the temperature range of 200–900°C. The technology for obtaining nickel germanosilicides heterostructures with rectifying properties based on bulk Si1 – xGex crystals by the solid-phase reaction method was proposed. The annealing temperature range of 400–800°C was found to be optimal for the formation of more uniform Ni-(Si1 – xGex) films based on bulk Si1 – xGex crystals. It was experimentally established that at an annealing temperature above 500°C, the peak of nickel monosilicide at 213.519 cm–1 becomes wider, which indicates the beginning of the decomposition of monogermanosilicide phases. A study of the temperature dependences of the concentration of minority charge carriers in the studied structures in the temperature range of 25–100°C was carried out. A sharp increase in the concentration of the charge carriers from ~1014 cm–3 to 1.2 × 1022 cm–3 was found out on samples annealed at a temperature of 600°C, which can contribute to the creation of effective radiation-resistant device structures with high efficiency.