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17 ta ish

Ish: Numerical calculation of the probability of an electronic transition in a two-barrier heterostructure by a thin nanolayer

  1. Electronic States in Semiconductor Heterostructures

    G. Bastard, J. A. Brum, R. Ferreira

    Bob19915 iqtibos
    ABI

  2. Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures

    И. С. Васильевский, Г. Б. Галиев, E. A. Klimov +7

    Maqola20112 iqtibos
    ABI

  3. InAs inserted InGaAs buried channel metal-oxide-semiconductor field-effect-transistors with atomic-layer-deposited gate dielectric

    Fei Xue, Han Zhao, Yen‐Ting Chen +3

    Maqola20112 iqtibos
    ABI

  4. Structural and electrical properties of quantum wells with nanoscale InAs inserts in In y Al1 − y As/In x Ga1 − x As heterostructures on InP substrates

    А. Л. Васильев, И. С. Васильевский, Г. Б. Галиев +6

    Maqola20112 iqtibos
    ABI

  5. Submicron Gate-Fitted Superconducting Junction Using a Two-Dimensional Electron Gas

    Hideaki Takayanagi, Tatsushi Akazaki

    Maqola19952 iqtibos
    ABI

  6. Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well

    Г. Б. Галиев, И. С. Васильевский, E. A. Klimov +4

    Maqola20152 iqtibos
    ABI

  7. Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts

    Д. С. Пономарев, И. С. Васильевский, Г. Б. Галиев +4

    Maqola20122 iqtibos
    ABI

  8. Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications

    J. Ajayan, D. Nirmal, P. Prajoon +1

    Maqola20172 iqtibos
    ABI

  9. Enhanced room-temperature 3.5 µm photoluminescence in stress-balanced metamorphic In(Sb,As)/In(Ga,Al)As/GaAs quantum wells

    M. Yu. Chernov, Victor A. Solov’ev, O. S. Komkov +6

    Maqola20172 iqtibos
    ABI

  10. Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

    S. V. Ivanov, M. Yu. Chernov, В. А. Соловьев +3

    Maqola20182 iqtibos
    ABI

  11. Performance Analysis of InP based Composite Channel e-mode HEMT Device for High Frequency Applications

    Murali Krishna, M M Rahool, K. Dinesh Kumar +2

    Maqola20212 iqtibos
    ABI

  12. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  13. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  14. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  15. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  16. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  17. Electron eigenvalues in quantum well of AlAs/InxGa1−xAs/AlAs heterostructures with InAs nanoinserts

    Paziljon Baymatov, Bakhrom Abdulazizov, Makhmudjon Tokhirjonov

    MaqolaSemiconductor Quantum Structures and DevicesThe European Physical Journal B20231 iqtibos
    ABI