SiC plasma characterization produced by 3 ns pulse laser at 10 ¹⁰ W/cm ² intensity

A silicon carbide (SiC) plasma has been produced by a Q-switched laser at 1064 nm, 3 ns pulse and 1010 W/cm2 intensity, in high vacuum to investigate the fundamental mechanisms of laser-semiconductor interaction. Although the high hardness and chemical stability restrain the SiC micromachining, it is a valuable semiconductor for devices working under extreme conditions.

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