STUDY OF THE DISTRIBUTION PROFILE OF ION- IMPLANTED IN SILICON AND INFLUENCE THERMAL ANNEALING ON THE STRUCTYRE OF IRON SILICIDES
Б. Э. ЭгамбердиевProfessor of the Federal State Budgetary Higher Educational Institution of the National Research University “MEI” in TashkentA. S. MallaevDirector of the National Center for Training Pedagogues in New Methods of Kashkadarya Region, associate professorShohruh SAYFULLOEVNational University of Uzbekistan named after Mirzo Ulugbek, PhD
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The paper presents the results of studies of the distribution profiles of implanted iron atoms in silicon depending on the irradiation dose and annealing temperature by the RBS method. The obtained results confirm similar data obtained by SIMS. The influence of thermal annealing on the distribution of iron and other impurities, in particular oxygen, has been studied. The possibility of using the RBS method for the analysis of the concentration distribution and the interaction of impurities with each other is presented. At the same time, the crystal structure of the surface and the electrophysical properties of ion-doped layers were studied.
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