Non-equilibrium processes in a gas-discharge cell with plasma contacts
Zokirjon KhaydarovFergana State University, Fergana, UzbekistanKhurshid YuldashevFergana Polytechnic Institute, Fergana, UzbekistanBunyodbek KhaydarovFergana Polytechnic Institute, Fergana, UzbekistanShukhrat SultanovFergana Polytechnic Institute, Fergana, UzbekistanQaxramon ErgashovFergana Polytechnic Institute, Fergana, UzbekistanMirzaolim AxmadjonovFergana Polytechnic Institute, Fergana, Uzbekistan
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Non-equilibrium processes in a gas discharge cell with semiconductor electrodes made of semi-insulating gallium arsenide and sulfur-doped silicon have been studied experimentally. It is shown that plasma contacts to semiconductor electrodes have a positive effect on the stability of gas discharge luminescence under selected conditions. Chromium-compensated gallium arsenide with two plasma contacts stabilizes the image converter operation in a wide range of operating temperatures and wavelengths. It is experimentally confirmed that based on a gas discharge cell with an additional damping cell, a semiconductor photographic ionization chamber provides imaging of objects in the IR region from 0.38 μm to 10 μm and beyond.
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