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Photoinduced Absorption Spectrum of GeSi/Si Quantum Dots in the Mid-IR and Terahertz Ranges under Resonant and Non-resonant Optical Pumping

Danila KararulovPeter the Great St. Petersburg Polytechnic University,St. Petersburg,RussiaRatmir V. UstimenkoPeter the Great St. Petersburg Polytechnic University,St. Petersburg,RussiaG A MelentevPeter the Great St. Petersburg Polytechnic University,St. Petersburg,RussiaDavid B. HayrapetyanRussian-Armenian University,Yerevan,ArmeniaK.T. DovranovKarshi State University,Karshi,UzbekistanD. A. NormurodovKarshi State University,Karshi,UzbekistanMaksim VinnichenkoPeter the Great St. Petersburg Polytechnic University,St. Petersburg,RussiaH.A. SarkisyanRussian-Armenian University,Yerevan,ArmeniaD. A. FirsovPeter the Great St. Petersburg Polytechnic University,St. Petersburg,Russia

2024en

ABI

Annotatsiya

Vacuum Fourier spectrometer was used to obtain mid-infrared photoinduced absorption spectra of undoped GeSi/Si quantum dots at liquid helium temperature under different conditions of interband optical pumping. High-intensity peaks in the absorption spectra are associated with intraband hole transitions from the ground and excited states of the quantum dot to the continuous spectrum. The less intense long-wavelength peak corresponds to the hole transitions between the ground and excited states. In the terahertz spectral range, equilibrium absorption spectra were obtained, associated with transitions from the ground to a nearby excited state of holes. Structures with GeSi/Si quantum dots can be used to develop detectors of mid-infrared radiation.

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Mavzular

Photonic and Optical Devices Terahertz technology and applications Silicon Nanostructures and Photoluminescence

Identifikatorlar

DOI: 10.1109/eexpolytech62224.2024.10755802

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