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On Si/NiSi2/Si(111) Heterostructures Obtained by Solid-Phase Deposition

N. M. MustafoevaUniversity of Information Technology and Management, 180100, Karshi, UzbekistanA. K. TashatovKarshi State University, 180003, Karshi, UzbekistanБ. Е. УмирзаковTashkent State Technical University named after Islam Karimov, 100095, Tashkent, UzbekistanMeruyert MamatovaKarshi State University, 180003, Karshi, Uzbekistan

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniquesjournal2024en

ABI

Annotatsiya

The composition, band gap, morphology, crystal structure, and electrophysical properties of the surface layers of the Si/NiSi2/Si(111) film system obtained by solid-phase epitaxy at different substrate temperatures are studied using Auger-electron spectroscopy, measuring the intensity of light transmitted through the sample and the specific resistance of the surface, scanning electron microscopy, and high-energy electron diffraction. It is established that the interface between the Si/NiSi2 and NiSi2/Si(111) layers is abrupt, and the thickness of the transition layers does not exceed 4–5 nm. It is shown that it is impossible to obtain a Si/NiSi2/Si(111) three-layer system with a thickness of Si and NiSi2 of less than 20–30 nm using solid-phase epitaxy.

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Mavzular

Semiconductor materials and interfaces Surface and Thin Film Phenomena Chalcogenide Semiconductor Thin Films

Identifikatorlar

DOI: 10.1134/s1027451024701337

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