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14 ta ish

Ish: On Si/NiSi2/Si(111) Heterostructures Obtained by Solid-Phase Deposition

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201523 iqtibos
    ABI

  2. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

    З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

    MaqolaIon-surface interactions and analysisTechnical Physics201119 iqtibos
    ABI

  3. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

    Б. Е. Умирзаков, Gunel Imanova, I. R. Bekpulatov +1

    MaqolaSemiconductor materials and interfacesModern Physics Letters B202317 iqtibos
    ABI

  4. Investigation of change of the composition and structure of the CaF2/Si films surface at the low-energy bombardment

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +2

    MaqolaSilicon Nanostructures and PhotoluminescenceNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms201413 iqtibos
    ABI

  5. Laser Recrystallization and 3D Integration

    J.-P. Colinge

    Maqola19846 iqtibos
    ABI

  6. Photoemission spectroscopy of the evolution of ultra-thin Co films on Si(111) substrates upon annealing temperature

    Ki-jeong Kim, Tai‐Hee Kang, Kwang-woo Kim +2

    Maqola20005 iqtibos
    ABI

  7. Structure of Epitaxial CoSi<sub>2</sub> Films on Si(111) Studied with Low-Energy Electron Diffraction (LEED)

    Ulrich Starke, J. Schardt, W. Weiß +3

    Maqola19984 iqtibos
    ABI

  8. Electronic and optical properties of bulk crystals of semiconducting orthorhombic BaSi2 prepared by the vertical Bridgman method

    Shingo Kishino, Tomohiro Imai, Tsutomu Iida +4

    Maqola20063 iqtibos
    ABI

  9. Potential variations around grain boundaries in impurity-doped BaSi2 epitaxial films evaluated by Kelvin probe force microscopy

    Daichi Tsukahara, Masako Baba, Syuta Honda +6

    Maqola20143 iqtibos
    ABI

  10. Isostructural BaSi<sub>2</sub>, BaGe<sub>2</sub> and SrGe<sub>2</sub>: electronic and optical properties

    Д. Б. Мигас, В. Л. Шапошников, В. Е. Борисенко

    Maqola20072 iqtibos
    ABI

  11. Electrical characterization and conduction mechanism of impurity-doped BaSi2 films grown on Si(111) by molecular beam epitaxy

    M. Ajmal Khan, T. Saito, Kotaro Nakamura +5

    Maqola20122 iqtibos
    ABI

  12. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  13. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  14. Sarlavhasiz

    Boshqa1 iqtibos
    ABI