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Controlling dislocation clusters in selective area growth of gallium nitride with hexagonal configurations of serpentine channel mask

Muhammad Saddique Akbar KhanDepartment of Physics, Fergana Polytechnic Institute, 150100, Fergana, UzbekistanYu GuoState Key Laboratory for Artificial Microstructure and Microscopic Physics, School of Physics Peking University, Beijing, 100871, ChinaPervaiz AhmadDepartment of Physics, College of Science and Humanities, Prince Sattam Bin Abdulaziz University, P.O. Box 173, Al-Kharj, 11942, Saudi ArabiaWeihua ChenState Key Laboratory for Artificial Microstructure and Microscopic Physics, School of Physics Peking University, Beijing, 100871, ChinaMenglai LeiState Key Laboratory for Artificial Microstructure and Microscopic Physics, School of Physics Peking University, Beijing, 100871, ChinaHuanqing ChenState Key Laboratory for Artificial Microstructure and Microscopic Physics, School of Physics Peking University, Beijing, 100871, ChinaXiaodong HuState Key Laboratory for Artificial Microstructure and Microscopic Physics, School of Physics Peking University, Beijing, 100871, China

Micro and Nanostructuresjournal2025en

ABI

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Annotatsiya mavjud emas.

Mavzular

GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices ZnO doping and properties

Identifikatorlar

DOI: 10.1016/j.micrna.2025.208144

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