Non-Equilibrium Charge Carriers in Silicon Wafers: Dynamic Characteristics

The dynаmic characteristics of nonequilibrium charge carriers in silicon wafers are examined. Measurement methods such as time-resolved photoluminescence and pulsed photoconductivity are described, which allow for a more accurate assessment of the lifetime of charge carriers. The data obtained for wafers with a thickness of 0.02 cm show that the characteristics correspond to known values for monocrystalline silicon. This confirms the feasibility of using this thickness to optimize photoconductivity and solar energy conversion efficiency. It is also important to note that further research may focus on optimizing the wafer thickness to achieve even higher values of efficiency and other parameters.

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