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Hybrid Secondary Structure of Manganese and Sulfur in Silicon

Sharifa B. UtamuradovaResearch Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, 100069, Tashkent, UzbekistanA. Sh. MavlyanovResearch Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, 100069, Tashkent, UzbekistanSh. A. SobirovaResearch Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, 100069, Tashkent, UzbekistanO. E. SattarovTashkent State Technical University, 100095, Tashkent, Uzbekistan
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A model and results of quantum-chemical calculations of a hypothetical structure of Si2MnS, similar to the cubic structure of F43m-β-MnS are proposed. The results of a comparative analysis of the gap width Eg of the Si2MnS structure obtained in quantum-chemical numerical calculations of the electron position and the experimental results of measuring the photoconductivity spectrum of a Si sample doped with Mn and S impurity atoms are presented. The quantum-chemical calculations of the Si2MnS structure were performed without a preliminary geometry optimization due to the fact that optimization and subsequent calculations by the density functional theory yields a fusion of the valence and conduction bands (VBM and CBM). Thorough theoretical studies, detailed quantum-chemical calculations, and experiments in the field of creating of a new class of hybrid compounds with a cubic lattice of the diamond type with the participation of elements of groups IV/III–V and IV/II–VI will allow predicting new structures in the future.

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