RAMAN SPECTROSCOPIC ANALYSIS OF TUNGSTEN SILICIDE (WSI2) PHASE FORMATION AND LATTICE STRESS IN P-TYPE SILICON.

RAMAN SPECTROSCOPIC ANALYSIS OF TUNGSTEN SILICIDE (WSI2) PHASE FORMATION AND LATTICE STRESS IN P-TYPE SILICON. Sh.B. Utamuradova, Sh.Kh. Daliev, J.J. Khamdamov, Y.Z. Mardiyev Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan E-mail: [email protected] https://doi.org/10.5281/zenodo.17910997 Abstract: In this study, the effect of tungsten (W) incorporation on the compositional and structural properties of p-type single-crystal silicon (p-Si) samples via high-temperature (1573 K, 5 hours) thermal diffusion was investigated. The properties of the samples were analyzed using Raman scattering spectroscopy. Raman spectroscopy analysis confirmed a decrease in the intensity of the main silicon LO peak in the p-Si<W> sample, as well as the appearance of new, sharp peaks at frequencies of ~244 cm⁻¹ and ~429 cm⁻¹. These changes indicate the formation of a new stable phase – tungsten silicide (WSi2) – on the silicon surface. Furthermore, the shift of the 2TA peak center to a higher frequency (~319 cm⁻¹) indicated the emergence of strong compressive mechanical stresses in the lattice. Keywords: single-crystal silicon (p-Si), tungsten (W), thermal diffusion, Raman spectroscopy, resistivity, tungsten silicide (WSi2), phonon bands (TA, LA, 2TO).

Hali tarjima qilinmagan