Sh.B. Utamuradova, Sh.Kh. Daliev, J.J. Khamdamov, Y.Z. Mardiyev

2 ta ish

Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan

1. RAMAN SPECTROSCOPIC ANALYSIS OF TUNGSTEN SILICIDE (WSI2) PHASE FORMATION AND LATTICE STRESS IN P-TYPE SILICON.

   Sh.B. Utamuradova, Sh.Kh. Daliev, J.J. Khamdamov, Y.Z. Mardiyev

   MaqolaSemiconductor materials and interfacesZenodo (CERN European Organization for Nuclear Research)20250 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.015191

2. RAMAN SPECTROSCOPIC ANALYSIS OF TUNGSTEN SILICIDE (WSI2) PHASE FORMATION AND LATTICE STRESS IN P-TYPE SILICON.

   Sh.B. Utamuradova, Sh.Kh. Daliev, J.J. Khamdamov, Y.Z. Mardiyev

   MaqolaSemiconductor materials and interfacesZenodo (CERN European Organization for Nuclear Research)20250 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.015209