Maqola

Electron-irradiation effects on Raman and infrared spectra of Te-doped n- and p-type silicon

M.Yu. TashmetovLabaratory of radiation Physics and Techniques of Solid-State Electronics, Institute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanSh. MakhkamovLabaratory of radiation Physics and Techniques of Solid-State Electronics, Institute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanSohibjon EgamovLabaratory of radiation Physics and Techniques of Solid-State Electronics, Institute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanN.T. SulaymonovLabaratory of radiation Physics and Techniques of Solid-State Electronics, Institute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanKh.N. DjangabaevDepartment of Semiconductor Physics, Karakalpak State University, Ch. Abdirov Street, Nukus, Uzbekistan

Physica B Condensed Matterjournal2026en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Mavzular

Silicon and Solar Cell Technologies Semiconductor materials and devices Nuclear materials and radiation effects

Identifikatorlar

DOI: 10.1016/j.physb.2026.418496

Iqtiboslar va manbalar

0 ta iqtibos25 ta foydalanilgan manba

Koʻrsatkichlar — AkademScholar · Tez orada