Magnetic field and temperature-dependent band gap modeling in narrow-gap quantum well semiconductors
Ulugbek ErkaboevNamangan State Technical University, I. Karimov Street 12, Namangan 160103, UzbekistanR. G. RakhimovNamangan State Technical University, I. Karimov Street 12, Namangan 160103, UzbekistanJ. I. MirzaevNamangan State Technical University, I. Karimov Street 12, Namangan 160103, UzbekistanN. A. SayidovNamangan State Technical University, I. Karimov Street 12, Namangan 160103, UzbekistanMuzaffar DadamirzaevNamangan State Technical University, I. Karimov Street 12, Namangan 160103, UzbekistanQudratali TemirovNamangan State Technical University, I. Karimov Street 12, Namangan 160103, Uzbekistan
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The fundamental physical parameter of both bulk and low-dimensional semiconductor structures is the band gap [Formula: see text], whose energetic width allows the prediction of the operational parameters of semiconductor-based devices in advance. Therefore, the determination of [Formula: see text]and [Formula: see text] (in cases where the band gap of newly synthesized materials is not known) is considered one of the primary tasks in semiconductor heterostructure technology. Furthermore, another important feature of [Formula: see text] is its strong sensitivity to external influences. Indeed, variations in [Formula: see text] resulting from such effects can fundamentally alter the physical and chemical properties of semiconductor devices.
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