Ushbu ishga iqtibos qilgan ishlar

3 ta ish

Ish: Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions

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2. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

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   MaqolaAdvanced Memory and Neural ComputingACS Applied Electronic Materials20236 iqtibos

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