Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: The effect of oxygen vacancy on switching mechanism of ZnO resistive switching memory

1. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

   Sattam Al Otaibi, Naveed ur Rehman, Shahid Iqbal +2

   MaqolaAdvanced Memory and Neural ComputingACS Applied Electronic Materials20236 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.000048

2. Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory

   Teng‐Yu Su, Chi‐Hsin Huang, Yu‐Chuan Shih +5

   MaqolaAdvanced Memory and Neural ComputingJournal of Materials Chemistry C20170 iqtibos

   ABIABI:AkademIndex/openalex/2017.article.000071