Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory
Teng‐Yu SuDepartment of Materials Science and EngineeringChi‐Hsin HuangDepartment of Materials Science and EngineeringYu‐Chuan ShihDepartment of Materials Science and EngineeringTsang-Hsuan WangDepartment of Materials Science and EngineeringHenry MedinaDepartment of Materials Science and EngineeringJian‐Shiou HuangDepartment of Materials Science and EngineeringHsu‐Sheng TsaiHsinchuYu‐Lun ChuehDepartment of Materials Science and Engineering
ABI
Annotatsiya
The role of defect engineering is essential in resistive switching memory.
Mavzular
Identifikatorlar
Iqtiboslar va manbalar
0 ta iqtibos54 ta foydalanilgan manba
Koʻrsatkichlar — AkademScholar · Tez orada