Electronic properties of ionizing radiation-induced defects at SiO$$_2$$/Si interface associated with non-trivial excess current splitting
Binghuang DuanInstitute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, 621999, People’s Republic of ChinaCen XiongInstitute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, 621999, People’s Republic of ChinaHang ZhouInstitute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, 621999, People’s Republic of ChinaGuanghui ZhangInstitute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, 621999, People’s Republic of ChinaWu ZhangSchool of Innovation and Entrepreneurship, Shandong University, Qingdao, 266237, People’s Republic of ChinaChao ZengInstitute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, 621999, People’s Republic of ChinaYu SongCollege of Physics and Electronic Information Engineering, Neijiang Normal University, Neijiang, 641100, People’s Republic of ChinaYang LiuInstitute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, 621999, People’s Republic of China
2024en
ABI
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