Maqola

Narrow band gap InGaSb, InAlAsSb alloys for electronic devices

R. MagnoNaval Research Laboratory , Washington, DC 20375-5347E. R. GlaserNaval Research Laboratory , Washington, DC 20375-5347B.P. TinkhamNaval Research Laboratory , Washington, DC 20375-5347James G. ChamplainNaval Research Laboratory , Washington, DC 20375-5347J.B. BoosNaval Research Laboratory , Washington, DC 20375-5347Mario G. AnconaNaval Research Laboratory , Washington, DC 20375-5347P. M. CampbellNaval Research Laboratory , Washington, DC 20375-5347

2006en

ABI

Annotatsiya

Solid source molecular beam epitaxy has been used to grow random alloy quaternary InAlAsSb and ternary InGaSb alloys with a 6.2Å lattice constant for use in electronic devices such as p-n junctions and heterojunction bipolar transistors (HBTs). Several p-n hetrojunctions composed of p-type InGaSb and one of several different n-type InAlAsSb alloys have been fabricated and show good rectification with ideality factors near one. In addition, several of these alloys have been used to make an n-p-n HBT that has demonstrated a dc current gain of 25.

Identifikatorlar

DOI: 10.1116/1.2201448

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