Maqola

Photoconduction amplification and quenching in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterostructures

T. S. KamilovBeruni State Technical University, ul. Universitetskaya 2, Tashkent, 700095, UzbekistanI. V. ErnstBeruni State Technical University, ul. Universitetskaya 2, Tashkent, 700095, UzbekistanA. Yu. SamuninIoffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

Technical Physicsjournal2014en

ABI

Annotatsiya

The photoconduction amplification and quenching in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterostructures are studied. It is shown that, at low temperatures, the high-ohmic base region of the HMS-Si〈Mn〉-HMS or HMS-Si〈Mn〉-M structures irradiated by intrinsic light becomes a low-ohmic conducting layer in the transition i-type region of the structures. The mechanism of amplification of the photoconduction in the heterostructures that is caused by collisional ionization in the i-type region is revealed. The sharp quenching of the photoconduction in the temperature range 180–220 K is explained.

Mavzular

Semiconductor materials and interfaces X-ray Diffraction in Crystallography Metallic Glasses and Amorphous Alloys

Identifikatorlar

DOI: 10.1134/s106378421412010x

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