On the possibility of developing thermoelectric sensors based on multielement higher manganese silicide film structures
Annotatsiya
The possibility of designing thermoelectric sensors based on multielement structures of higher manganese silicide (HMS) polycrystalline films is considered. Test structures with various configurations are developed for studying electrical and thermoelectric parameters of polycrystalline HMS films. The geometrical sizes of the elements of test structures are chosen to match the grain size in polycrystalline HMS films. The test structures are prepared using the planar silicon technology. In these structures, the current-voltage characteristics, Hall constant, charge carrier concentration, and mobility are measured. The thermopower (α) and electrical conductivity (σ) are studied in a temperature range of T = 77–600 K, where α > 250 μV/K and electrical conductivity σ ∼ 20 (Ω cm)−1. It is shown that the sensitivity and thermopowers increase upon a decrease in the cross-sectional area of the elements.