Electronic properties of semiconducting silicides: fundamentals and recent predictions
L. IvanenkoMicroelectronics, Belarusian State University of Informatics and Radioelectronics, P. Browka Str. 6, 220013 Minsk, BelarusВ. Л. ШапошниковMicroelectronics, Belarusian State University of Informatics and Radioelectronics, P. Browka Str. 6, 220013 Minsk, BelarusА. Б. ФилоновMicroelectronics, Belarusian State University of Informatics and Radioelectronics, P. Browka Str. 6, 220013 Minsk, BelarusА. В. КривошееваMicroelectronics, Belarusian State University of Informatics and Radioelectronics, P. Browka Str. 6, 220013 Minsk, BelarusВ. Е. БорисенкоMicroelectronics, Belarusian State University of Informatics and Radioelectronics, P. Browka Str. 6, 220013 Minsk, BelarusД. Б. МигасINFM and Dipartimento di Scienza dei Materiali, Universita di Milano-Bicocca via Cozzi 53, 20125 Milan, ItalyLeo MiglioINFM and Dipartimento di Scienza dei Materiali, Universita di Milano-Bicocca via Cozzi 53, 20125 Milan, ItalyG. BehrLeibniz-Institute of Solid State and Materials Research, P.O. Box 27 01 16, D 01171 Dresden, GermanyJ. SchumannLeibniz-Institute of Solid State and Materials Research, P.O. Box 27 01 16, D 01171 Dresden, Germany
2004en
ABI
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