Numerical analysis of the effect of illumination intensity on photoelectric parameters of the silicon solar cell with various metal nanoparticles
Annotatsiya
It is important to study the effect of light intensity on the main photoelectric parameters of silicon solar cell with various metal nanoparticles because the intensity of sunlight is variable. In this paper, the effect of Cu, Pt, Au, Ag, Ti, Al, Co nanoparticles on dependence of main photoelectric parameters of silicon solar cell on light intensity has been studied by modeling with Sentaurus TCAD. The intensity coefficient of short circuit current densities of Pt and Ti nanoparticles induced silicon solar cells were found to be K J,P t = 0.0158 A/W and K J,T i = 0.0164 A/W. For simple silicon solar cell, this value was found to be K J = 0.0071 A/W. Thus, we have observed that was the two-fold greater the intensity coefficient of short circuit current density and output power for the silicon solar cells with Ti and Pt nanoparticles relative to that of a simple silicon solar cell.