Ushbu ishga iqtibos qilgan ishlar

5 ta ish

Ish: Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure

1. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

   I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

   MaqolaChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20239 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.000847

2. Effect of γ-Irradiation on Structure and Electrophysical Properties of S-Doped ZnO Films

   С. З. Зайнабидинов, Akramjon Y. Boboev, Nuritdin Y. Yunusaliyev

   MaqolaZnO doping and propertiesEast European Journal of Physics20247 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.000639

3. Influence of the ultrasonic irradiation on characteristic of the structures metal-glass-semiconductor

   Bahodir Kuchkarov, О. О. Маматкаримов, A. A. Abdulkhayev

   MaqolaGlass properties and applicationsIOP Conference Series Earth and Environmental Science20201 iqtibos

   ABIABI:AkademIndex/openalex/2020.article.001266

4. Influence of the parameters to transition capacitance at nCdS-pSi heterostructure

   I.B. Sapaev, Б. Сапаев, S. Sadullaev +5

   MaqolaChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20231 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.432352

5. Study of kinetical laws of process of the catalytic synthesis of nanocarbon from methane

   Kh.N. Kholmirzaeva, N.I. Fayzullayev, A. Abdazimov

   MaqolaCatalysis and Oxidation ReactionsE3S Web of Conferences20230 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.006613