Maqola

IR photodetectors operating under background illumination

М. К. БахадырхановTashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, UzbekistanС. Б. ИсамовTashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, Uzbekistan

Technical Physicsjournal2016en

ABI

Annotatsiya

The spectral dependence of the photoconductivity of silicon with multiply charged manganese nanoclusters is studied at different background currents. The spectral ranges where the IR quenching of the photoconductivity takes place and a shift in the photon energy at which the quenching efficiency as a function of the background current reaches a maximum are determined. The results allow us to design low-level IR photodetectors intended for the interval hν = 0.4–0.8 eV in the presence of fairly high background currents.

Mavzular

Silicon Nanostructures and Photoluminescence Advanced Semiconductor Detectors and Materials Semiconductor Quantum Structures and Devices

Identifikatorlar

DOI: 10.1134/s106378421603004x

Iqtiboslar va manbalar

5 ta iqtibos 8 ta foydalanilgan manba

Koʻrsatkichlar — AkademScholar · Tez orada